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2SC14 N25F80 BZX84C11 SILICON MC2000 54ALS BCX70 FN4273
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  mark 10kv 200ma high voltage diodes maximum reverse recovery time trr at 25c HVC10F features high speed switching high current high surge resisitivity for crt discharge high reliability design applications maximum ratings and characteristics absolute maximum ratings items repetitive peak renerse voltage average output current suege current junction temperature allowable operation case temperature symbols v rrm i o i fsm t j tc condition ta=25c,resistive load 200 125 120 -40 to +125 units kv ma a peak c c c electrical characteristics (ta=25c unless otherwise specified ) items maximum forward voltage drop maximum reverse current symbols v f ir 1 ir 2 conditions at 25c,i f at 25c,v r at 100c,v units v ua ua junction capacitance cj at 25c,v r storage temperature t stg is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. outline drawings : mm HVC10F cathode mark 26 min. 26 min. 10 o 3.0 o 0.6 cathode mark lot no. gete electronics co.,ltd http://www.getedz.com e-mail:sales@getedz.com 2012 =0v,f=1mhz -- type HVC10F HVC10F 20 50 5.0 20 10 x light power supply laser voltage doubler circuit microwave emission power pf hvca tm =v rrm r =v rrm 80 ns =i f(av) HVC10F rohs corresponding products


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